- 62 percent reduction in cost of ownership
- Removes all dry steps from TSV isolation and metallization
- Enables wet-process deposition of isolation, barrier and copper seed layers within high aspect ratio TSVs using Electrografting
AquiVia
- Isolation layer by Electrografting (eG™)
- Barrier layer by Chemical Grafting (cG™)
- Cu seed layer by Electrografting (eG ViaCoat™)
Benefits
A unique benefit of AquiVia is its strong adhesion: The chemical formulations and processes have been specifically tailored to promote covalent bonding between the layers and with the substrate, ensuring strong adhesion of all layers to the substrate.
AquiVia enables deposition of smooth and continuous layers over highly scalloped TSVs, for higher yield and enhanced reliability.
AquiVia chemistries are ready-to-use aqueous solutions. Formulations and process recipes are fully compatible with standard electroplating tools. The full wet-process TSV filling flow (isolation/barrier/seed and Cu fill) can now be implemented on a single electroplating tool, with only minor hardware modifications and no need for new capital expenditure.
Additional Benefits
- Extended lifetime for existing plating equipment
- Isolation and metallization integrated on one tool
- Reduced initial investment
- Faster time to market
- Easier TSV shrink because of very high aspect ratio capability
- Less I/O real estate
- Possibility of eliminating wafer carriers
Features
- Compatible with most electroplating tools
- Ultra-conformal layers even at very high aspect ratios
- Highly adherent films due to covalent bonding
- Excellent insulator properties
- Excellent Cu-diffusion barrier properties
- High purity copper seed layer
- Excellent thermal stability
- Uniformity at the wafer scale
