Microelectronics Technical Papers

Polymer for microelectronics 2010 : Electrografted polymer layers for insulation of deep TSV structure, V. Mevellec,

AMC 2010: New Generation of Cost-effective Seedless Technologies for Through Silicon Vias C. Truzzi

IMAPS 2010: Integration of Electrografted Layers for the Metallization of Deep TSVs, F. Raynal, V. Mevellec, N. Frederich, D. Suhr, I. Bispo, B. Couturier and C. Truzzi

SEMICON Korea 2010: Electrografting: a Production-Ready Nanotechnology for the Metallization of Through Silicon Vias, C. Truzzi, F. Raynal, V. Mevellec and G. Guittet

Future Fab International, Issue 31: Electrografting: Unlocking High-Aspect-Ratio TSVs, C. Truzzi and S. Lerner

SEMICON Korea 2009: A novel approach to TSV metallization based on electrografted layers, F. Raynal, I. Bispo, V. Mevellec, D. Suhr, S. Zarhaoui, C. Truzzi and S. Lerner

IEEE 3D System Integration 2009: Wet-Process Deposition of TSV Liner and Metal Films, C. Truzzi, F. Raynal and V. Mevellec

ECTC 2009: Electrografted Seed Layers for Metallization of Deep TSV Structures, F. Raynal, S. Zahraoui, N. Frederich, J. Gonzalez, B. Couturier, C. Truzzi and S. Lerner

IITC 2008 : An evaluation of electrografted copper seed layers for enhanced metallization of deep TSV structures, S. Ledain, C. Bunel, P. Mangiagalli, A. Carles, N. Frederich, E. Delbos, L. Omnès and A. Etcheberry

MRS Fall meeting 2008: Through Silicon Via metallization: A novel approach for insulation/barrier/copper seed layer deposition based on wet electrografting and chemical grafting technologies, D. Suhr, J. Gonzalez, I. Bispo, F. Raynal, C. Truzzi, S. Lerner and V. Mevellec

Future Fab International, July 2008: Economic Advancement of High-Aspect-Ratio Through-Silicon Vias for 3D Integration, S. Lerner

MAM 2008: High Aspect Ratio Via Metallization for 3D Integration using CVD TiN Barrier and Electrografted Cu Seed, G.Druais, G.Dilliway, P.Fischer, E.Guidotti, O.Luhn, A.Radisic, S.Zahraoui

AMC 2007: From copper seed layers to the All Wet™: Electrografting (eG™) at work for advanced copper interconnects, C.Bureau

MAM 2006: Novel dielectric capping layer for advanced copper interconnects using chemical grafting (cG™), I. Bispo, B. Couturier, P.H. Haumesser, P. Mangiagalli, H. Monchoix, G. Passemard, C. Peyne, S. Roy, N. Thieriet, P. Rabinzohn, C. Bureau

IITC 2006: Evolution of Cu-electrodeposition technologies for 45 nm and beyond, W. S. Shue

AMC 2006: Electro-grafting of ultra-thin (sub-10 nm) seed layers for advanced copper metallization, F. Raynal, E. Guidotti, J. Gonzalez, S. Roy and S. Gétin

ITRS 2005: the eG™ Seed product to perform wet ultra-thin copper seed layers for ULSI interconnects enters the ITRS (Semiconductor Industry Association. The International Technology Roadmap for Semiconductors, 2005 edition. International SEMATECH:Austin, TX, 2005).

ECS 2005: Electro-grafting, a unique wet technology for seed and direct plating in copper metallization, J. Gonzalez, F. Raynal, H. Monchoix, A. Ben Hamida, J. Daviot, P. Rabinzohn, C. Bureau

IEDM 2004: Direct plating of Cu on ALD TaN for 45 nm node Cu BEOL metallization, C.H. Shih, H.W. Su, C.J. Lin, T. Ko, C.H. Chen, J.J. Huang, C.H. Peng, C.H. Hsieh, M.H. Tsai, W.S. Shue, C.H. Yu and M.S. Liang, TSMC, Hsin-Shu, Taïwan, ROC

IEDM 2004:  short course: 45 nm BEOL, J. Sudijono, Advanced Module Technology Development, Chartered Semiconductors (extract)

PEAKS in ECD 2004: Ultra-thin and conformal electro-grafted (eG™) copper seed layers, F. Raynal, C. Peyne, S. Verneyre, P. Rabinzohn, C. Bureau

IITC 2004: Copper metallization for advanced interconnects: the electrochemical revolution, P.-H. Haumesser, M. Cordeau, S. Maîtrejean, T. Mourier, L.G. Gosset, W.F.A. Besling, G. Passemard, J. Torres

AMC 2004: Grafting enhancement of electrolessly deposited Self-Aligned Barriers (Caps), T. Decorps, P.-H. Haumesser, C. Peyne, M. Cordeau, F. Raynal, P. Rabinzohn, C. Bureau

AMC 2003: Electro-grafting (eG™): a new route to copper seeding or direct plating, P.-H. Haumesser, F. Giblat, S. Ameur, M. Cordeau, S. Maîtrejean, T. Mourier, C. Bureau, G. Passemard

Electrografting Technical Papers

Surf.Sci., 600, 675, 2006: Carbon-to-metal bonds: electro-reduction of 2-butenenitrile, G. Deniau, L. Azoulay, P. Jégou, G. Le Chevallier, S. Palacin

Chemical Society Reviews 2005: Attachment of organic layers to conductive or semiconductive surfaces by reduction of diazonium saltse, J. Pinson, F. Podvorica

Chem. Phys. Chem., 5, 1468, 2004: Molecule to metal bonds: electro-grafting of polymers onto conducting surfaces, S. Palacin, C. Bureau, J. Charlier, G. Deniau, B. Mouanda, P. Viel

Adv. Funct. Mat., 14, 125, 2004: Mask-free localized grafting of organic polymers at the micrometer or submicrometer scale on composite conductor or semiconductor substrates, J. Charlier, S. Ameur, J.P. Bourgoin, C. Bureau, S. Palacin

J. Chem. Phys., 115, 10493, 2001: A density functional for tuning the charge transfer between a transition metal electrode and a chemisorbed molecule via the electrode potential, X. Crispin, V.M. Geskin, C. Bureau, R. Lazzaroni, W. Schmickler, J.L. Brédas

J. Electroanal. Chem., 470, 14, 1999: Electro-polymerization of methacrylonitrile on a rotating disc electrode at high spinning rate, P. Viel, C. Bureau, G. Zalczer, G. Lécayon

J. Chem. Phys., 106, 8821, 1997: On a modeling of voltage-application to metallic electrodes using density functional theory, C. Bureau, G. Lécayon