eG Seed™ is an electrografted Cu seed layer to create reliable interconnects. It provides conformal, ultra-thin, uniform and adherent copper seed layers for the metallization of advanced interconnects (45nm node and beyond).
Ultra-thin and conformal copper seed layers can be deposited on various barrier materials with very high adhesion and low resistivity. The technology ensures 90% step coverage and precise thickness control from 5 to 30nm. Resistivity is 10µOhm.cm at 10nm.
A unique benefit of eG Seed™ over PVD is its outstanding coverage of dual damascene structures, for higher yield and enhanced reliability.
